 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 1.0 15.7 MAX. 4 3.20.2 4.7 MAX. 1.5 FEATURES 2SK2368: RDS (on) = 0.6 (VGS = 10 V, ID = 8.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 30 15 60 120 3.0 150 15 161 V V A A W W C A mJ 19 MIN. 3.00.2 * Low Ciss Ciss = 1 600 pF TYP. * High Avalanche Capability Ratings 1 2 3 2.20.2 5.45 1.00.2 5.45 4.50.2 2SK2367: RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A) 20.00.2 6.0 0.60.1 2.80.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 Drain -55 to +150 C Body Diode Gate ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 Source Document No. TC-2506 (O. D. No. TC-8065) Date Published December 1994 P Printed in Japan (c) 7.0 * Low On-Resistance 1995 1994 2SK2367/2SK2368 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-Resistance SYMBOL RDS (on) MIN. TYP. 0.4 0.5 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) trr Qrr 1 600 300 30 30 40 70 25 43 10 20 1.0 400 1.8 2.5 5.0 100 100 MAX. 0.5 0.6 3.5 V S UNIT TEST CONDITIONS VGS = 10 V ID = 8.0 A 2SK2367 2SK2368 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 8.0 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 8.0 A VGS = 10 V VDD = 150 V RG = 10 RL = 18.8 ID = 15 A VDD = 400 V VGS = 10 V IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 di/dt = 50 A/s A nA pF pF pF ns ns ns ns nC nC nC V ns C Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG. VGS = 20 - 0 V 50 Test Circuit 2 Switching Time D.U.T. L VDD PG. RG RG = 10 RL VGS Wave Form VGS 0 10 % VGS (on) 90 % VDD ID 90 % 90 % ID BVDSS IAS ID VDD VDS VGS 0 t t = 1 us Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2367/2SK2368 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 100 80 60 40 20 80 60 40 20 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 d ite ) Lim 10 V ) on = S( RD VGS t (a ID (DC) Po TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 24 Pulsed VGS = 20 V 10 V 8V 6V ID (pulse) PW 10 0 = s 10 20 ID - Drain Current - A ID - Drain Current - A s 10 1 m s 16 12 8 4 w er 10 m Di s ss ipa 1.0 tio n 2SK2368 Lim ite 2SK2367 d 0.1 1 TC = 25 C Single Pulse 10 100 1 000 0 4 8 12 16 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V 100 Pulsed ID - Drain Current - A 10 TA = -25 C 25 C 75 C 125 C 1 0.1 0 5 10 15 VGS - Gate to Source Voltage - V 3 2SK2367/2SK2368 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (ch-c) (t) - Transient Thermal Resistance - C/W 1 000 100 10 Rth (ch-c) = 1.04 C/W 1 0.1 0.01 TC = 25 C Single Pulse 0.001 10 u 100 u 1m 10 m 100 m 1 10 100 1 000 Rth (ch-a) = 41.7 C/W PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 TA = -25 C 25 C 75 C 125 C VDS = 10 V Pulsed RDS (on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed 10 1.0 ID = 10 A 5A 2.5 A 0.5 1.0 0.1 1.0 10 100 0 10 20 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed VGS (off) - Gate to Source Cutoff Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 RDS (on) - Drain to Source On-State Resistance - 2.0 3.0 1.0 2.0 1.0 0 1.0 10 ID - Drain Current - A 100 0 -50 0 50 100 150 Tch - Channel Temperature - C 4 2SK2367/2SK2368 RDS (on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.5 ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 100 1.0 10 VGS = 0 1.0 VGS = 10 V 0.1 0 0.5 1.0 1.5 0.5 ID = 10 A 5A VGS = 10 V 0 -50 0 50 100 150 Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF td (on), tr, td (off), tf - Switching Time - ns VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1 000 tr tf 100 td(on) td(off) 10 VGS = 0 f = 1 MHz Ciss 1 000 100 Coss Crss 10 1 10 100 1 000 1.0 0.1 1.0 VDS = 150 V VGS = 10 V RG = 10 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = 50 A/s VGS = 0 400 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 10 A VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 300 1 000 VDD = 400 V 250 V 125 V 12 VGS 10 8 6 200 100 VDS 0 10 20 30 4 2 40 100 0.1 1.0 10 100 ID - Drain Current - A Qg - Gate Charge - nC 5 VGS - Gate to Source Voltage - V 14 2SK2367/2SK2368 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 200 EAS - Single Avalanche Energy - mJ IAS - Single Avalanche Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25 C EA 150 161 mJ ID (peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V IAS = 15 A 10 S 100 =1 61 mJ 50 1.0 25 50 75 100 125 150 175 100 u 1.0 m 10 m 100 m Starting Tch-Starting Channel Temperature - C L - Inductive load - H 6 2SK2367/2SK2368 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2367/2SK2368 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of 2SK2367
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |